View MRFE6S9045NR1_4114495.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MRFE6S9045N Rev. 0, 10/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 22.1 dB Drain Efficiency -- 32% ACPR @ 750 kHz Offset -- - 46 dBc in 30 kHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (920 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band (920 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 68% Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ
MRFE6S9045NR1
880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC
Value - 0.5, +66 - 0.5, + 12 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 45 W CW Case Temperature 79C, 10 W CW Symbol RJC Value (2,3) 1.0 1.1 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9045NR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3A (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 A) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 350 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 1.02 27 81 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 2.3 0.05 2 3.1 0.23 3 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL 21 30.5 -- -- 22.1 32 - 46 - 19 25 -- - 44 -9 dB % dBc dB (continued)
MRFE6S9045NR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 920 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 20 46 1.5 - 62 - 78 -- -- -- -- -- dB % % dBc dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 45 W, f = 920 - 960 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) Gps D IRL P1dB -- -- -- -- 20 68 - 12 52 -- -- -- -- dB % dB W
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, 865 - 900 MHz Bandwidth Video Bandwidth @ 48 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 35 MHz Bandwidth @ Pout = 10 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) VBW -- 10 -- MHz
GF G P1dB
-- -- --
0.72 0.011 0.006
-- -- --
dB dB/C dBm/C
MRFE6S9045NR1 RF Device Data Freescale Semiconductor 3
B1 R1 VBIAS + C15 RF INPUT R2 R3 C7 L1 Z10 C5 Z1 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.215 0.221 0.500 0.460 0.040 0.280 0.087 0.435 0.057 x 0.065 x 0.065 x 0.100 x 0.270 x 0.270 x 0.270 x 0.525 x 0.525 x 0.525 C3 C4 C6 Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C9 DUT C8 Z11 Z12 L2
B2 + C10 C16 + C17 + VSUPPLY
C18 RF Z16 OUTPUT C14
Z13
Z14
Z15
C11
C12
C13
Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530 Taper Microstrip Microstrip Microstrip
0.360 x 0.270 Microstrip 0.063 x 0.270 Microstrip 0.360 x 0.065 Microstrip 0.095 x 0.065 Microstrip 0.800 x 0.065 Microstrip 0.260 x 0.065 Microstrip 0.325 x 0.065 Microstrip Taconic RF - 35 0.030, r = 3.5
Figure 1. MRFE6S9045NR1 Test Circuit Schematic
Table 6. MRFE6S9045NR1 Test Circuit Component Designations and Values
Part B1 B2 C1, C7, C10, C14 C2, C4, C12 C3 C5, C6 C8, C9 C11 C13 C15, C16, C17 C18 L1, L2 R1 R2 R3 Ferrite Bead Ferrite Bead 47 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors, Gigatrim 15 pF Chip Capacitor 12 pF Chip Capacitors 13 pF Chip Capacitors 7.5 pF Chip Capacitor 0.6 - 4.5 pF Variable Capacitor, Gigatrim 10 F, 35 V Tantalum Capacitors 220 F, 50 V Electrolytic Capacitor 12.5 nH Inductors 1 k, 1/4 W Chip Resistor 560 k, 1/4 W Chip Resistor 12 , 1/4 W Chip Resistor Description Part Number 2743019447 2743021447 ATC100B470JT500XT 27291SL ATC100B150JT500XT ATC100B120JT500XT ATC100B130JT500XT ATC100B7R5JT500XT 27271SL T491D106K035AT EMVY500ADA221MJA0G A04T - 5 CRCW12061001FKEA CRCW120656001FKEA CRCW120612R0FKEA Manufacturer Fair Rite Fair Rite ATC Johanson ATC ATC ATC ATC Johanson Kemet Nippon Chemi - con Coilcraft Vishay Vishay Vishay
MRFE6S9045NR1 4 RF Device Data Freescale Semiconductor
C15
R2 R3 R1
C18
VDD C16 C17 B2 C7 C5 C8 C3 C6 CUT OUT AREA C4 C10 L2
VGG
B1
L1 C1 C2
C14 C9 C11 C12 C13
TO-270/272 Surface / Bolt down
Figure 2. MRFE6S9045NR1 Test Circuit Component Layout
MRFE6S9045NR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 0 ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 D, DRAIN EFFICIENCY (%) 0 -5 -10 -15 IRL, INPUT RETURN LOSS (dB) ACPR (dBc), ALT1 (dBc) IRL, INPUT RETURN LOSS (dB) 23 22 Gps, POWER GAIN (dB) 21 20 19 18 ACPR 17 ALT1 16 800 820 840 860 880 900 920 940 960 f, FREQUENCY (MHz) -70 -60 VDD = 28 Vdc Pout = 10 W (Avg.) IDQ = 350 mA N-CDMA IS-95 Pilot Sync, Paging Traffic Codes 8 Through 13 IRL D 34 32 Gps 30 -30 -40 -50
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 10 Watts Avg.
23 22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 15 800
D Gps VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 350 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13
50 40 30 -20 ACPR -30 -40 -50 ALT1 IRL 820 840 860 880 900 920 940 960 -60 -70
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 20 Watts Avg.
24 23 Gps, POWER GAIN (dB) 22 21 20 19 18 17 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements 350 mA 262.5 mA 175 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 525 mA 437.5 mA
-10 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements -20 IDQ = 175 mA
-30
-40
262.5 mA 350 mA
-50 437.5 mA -60 1 10
525 mA
100
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRFE6S9045NR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) -10 IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 -50 -60 -70 -80 1 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 3rd Order 5th Order VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz f2 = 880.1 MHz, Two-Tone Measurements 0 -10 -20 -30 -40 -50 -60 -70 1 10 TWO-TONE SPACING (MHz) 100 IM3-U IM3-L VDD = 28 Vdc, Pout = 48 W (PEP), IDQ = 350 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz
IM5-L IM5-U IM7-L IM7-U
Figure 7. Intermodulation Distortion Products versus Output Power
56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 P1dB = 47.38 dBm 50 (54.7 W) 49 48 47 46 24 25 26 27 28 29 30 P3dB = 48.40 dBm (69.18 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
Ideal P6dB = 49.21 dBm (83.36 W)
Actual VDD = 28 Vdc, IDQ = 350 mA, Pulsed CW 12 sec(on), 1% Duty Cycle, f = 880 MHz 31 32 33 34
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 1 -5 -10 -15 -20 25_C -25 85_C -30 -30_C -35 25_C -40 85_C -30_C -45 -50 TC = -30_C -55 -60 85_C -65 25_C -70 -75 100 -30_C 25_C 85_C ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
VDD = 28 Vdc, IDQ = 350 mA f = 880 MHz, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13
Gps
ACPR
D ALT1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
MRFE6S9045NR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 15 1
TC = -30_C 25_C Gps 85_C
25_C
-30_C 85_C
80 70 Gps, POWER GAIN (dB) 60 50 40 30 D, DRAIN EFFICIENCY (%)
23 IDQ = 350 mA f = 880 MHz 22
21
20
D
VDD = 28 Vdc IDQ = 350 mA f = 880 MHz 10
20 10 0 100
19 28 V VDD = 24 V 18 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) CW 100 32 V
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 10 W Avg., and D = 32%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9045NR1 8 RF Device Data Freescale Semiconductor
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW .. ... ..... . .. .............................. ............ ............. . . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... .... ........ ..... ... . ....... ....... .. ... ....... . .... .... .. . . .. ......... ......... ... . ..... ...... ....... .. ..... . ..... ... ... . .... .... . ..... .... . ..... . .... ......... . .. .. . ...... .... ....... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz .............. . . .. . . ... .... .......... ..... . ............... . ......... .... ........... Integrated BW Integrated BW .. ...... ... . ............ . ..... .. .. .. ...... ....... ...
Figure 14. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9045NR1 RF Device Data Freescale Semiconductor 9
Zo = 5 f = 910 MHz f = 850 MHz Zsource Zload f = 850 MHz f = 910 MHz
VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg. f MHz 850 865 880 895 910 Zsource 0.42 + j0.30 0.42 + j0.44 0.45 + j0.60 0.48 + j0.74 0.50 + j0.85 Zload 3.05 + j1.27 3.16 + j1.33 3.31 + j1.33 3.43 + j1.20 3.35 + j1.05
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9045NR1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRFE6S9045NR1 RF Device Data Freescale Semiconductor 11
MRFE6S9045NR1 12 RF Device Data Freescale Semiconductor
MRFE6S9045NR1 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Oct. 2007 * Initial Release of Data Sheet Description
MRFE6S9045NR1 14 RF Device Data Freescale Semiconductor
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2007. All rights reserved.
MRFE6S9045NR1
Document Number: RF Device Data MRFE6S9045N Rev. 0, 10/2007 Freescale Semiconductor
15

▲Up To Search▲

Price & Availability of MRFE6S9045NR1

	To Download MRFE6S9045NR1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .